Deep submicron transistor fabrication method

Details Deep submicron transistor fabrication method Deep submicron transistor fabrication method

1992-10-30

1993-12-14

Quach, T. N.

Fishing, trapping, and vermin destroying

437 45, 437228, 437978, 148DIG113, 156645, 156653, H01L 21336

Patent

active

052702340

ABSTRACT:
A deep submicron transistor fabrication method that employs only optical lithography involves the formation of a relatively wide aperture using optical techniques; the formation of composite sidewalls having differential etch resistance in the aperture to define a final aperture width less than that available with conventional optical techniques; the etching of the final aperture to expose a controlled channel length; the implantation of the channel through the aperture; and the implantation of source and drain with the sidewalls protecting previously doped LDD regions in the active area.

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Rye, R., "Hot Filament Activated . . . ", I. Vac. Sci. Technol. A9(3), May/Jun. 1991, pp. 1099-1103.
Kolenkow, R., et al., "Chemical-Mechanical Wafer Polishing . . . ", Solid State Technology, Jun. 1962, pp.112-114.
Gildenblat, G., et al.,"Electrical Characteristics of Schottky . . . ", Appl. Phys. Lett., 53(7), 15 Aug. 1988, pp. 586-588.

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