Deep submicron MOS transistors with a self-aligned gate electrod

Details Deep submicron MOS transistors with a self-aligned gate electrod Deep submicron MOS transistors with a self-aligned gate electrod

1998-07-09

2000-12-05

Hardy, David

Implements or apparatus for applying pushing or pulling force

Apparatus for hauling or hoisting load, including driven...

Device includes rotatably driven, cable contacting drum

257314, 257315, 257316, 257344, 257413, 257414, H01L 2976

Patent

active

061555371

ABSTRACT:
A MOS transistor with a pair of lightly doped drain (LDD) sub-regions in the substrate and whose gate electrode is self-aligned with a non-doped gate oxide layer overlying the channel region between the two LDD sub-regions. The MOS transistor is characterized as having the following structure: (a) a substrate having a source region and a drain region; (b) a gate oxide layer on the substrate which overlays the source and drain regions, the gate oxide layer containing a central portion and two side portions, the central portion being a non-doped, and the side portions being lightly doped with a dopant; (c) a gate electrode formed on the gate oxide layer, the gate electrode having a base self-aligned with the central non-doped portion of the gate oxide layer; (d) a pair of sidewall spacers formed on sidewalls of the gate electrode, each of the sidewall spacers having a base self-aligned with a respective lightly doped side portion of the gate oxide layer; and (e) a pair of non-contiguous lightly dopes drain (LDD) sub-regions formed in the substrate. The LDD sub-regions respectively underlie the lightly doped side portions of the gate oxide layer and are formed by thermal diffusion of dopants therefrom, the LDD sub-regions are also respectively adjacent to the source and drain regions and are facing each other to define a channel region therebetween.

REFERENCES:
patent: 5654568 (1997-08-01), Nakao
patent: 5675161 (1997-10-01), Thomas
patent: 5736765 (1998-04-01), Oh et al.
patent: 5932909 (1999-08-01), Kato et al.
patent: 5939749 (1999-08-01), Taketa et al.

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