Metal treatment – Compositions – Heat treating
Patent
1974-11-22
1976-08-03
Ozaki, G.
Metal treatment
Compositions
Heat treating
148171, 148172, 148177, 148179, 252 623GA, 252 623E, 252 623ZT, H01L 742
Patent
active
039727424
ABSTRACT:
A semiconductor diode comprises a first body of semiconductor material having a selected resistivity and a first type conductivity and a region of second type conductivity and a selected resistivity. The second body consists of recrystallized semiconductor material or a layer thereof having solid solubility of a dopant therein and has the same crystallographic structure as the first body. The second region is formed by a temperature gradient zone melting process embodying the migration of a metal-enriched melt of semiconductor material through the second body of semiconductor material which initially has a <111> axial crystallographic orientation.
REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 3484302 (1969-12-01), Maeda et al.
patent: 3520735 (1970-07-01), Kurata
R.C.A. Review, Dec. 1963, pp. 528-533.
Anthony Thomas R.
Cline Harvey E.
Cohen Joseph T.
General Electric Company
Ozaki G.
Squillaro Jerome C.
Winegar Donald M.
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