Deep polysilicon emitter antifuse memory cell

Details Deep polysilicon emitter antifuse memory cell Deep polysilicon emitter antifuse memory cell

1988-04-13

1988-05-31

Carroll, J.

357 34, 357 59, 357 67, 357 71, H01L 2702, H01L 2972, H01L 2348

Patent

active

047484900

ABSTRACT:
A memory cell (10) has a bipolr decoupling element (56), (68), (82), (92) having an exterior contact (36). A refractory conductive layer (40) is formed on contact (36), and an initially nonconductive antifuse layer (48) is formed on refractory layer (40). A nonrefractory metal layer (50) is formed on the nonconductive layer (48). Blocking elements (56) (68), (82) (92) are connected to a word line (52), (78). When a specified voltage is impressed across the nonrefractory metal layer (50) and the word line (52), (78), nonrefractory metal diffuses through the initially nonconductive layer (48) to the refractory conductive layer (40) to provide a conductive path between the two.

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W. R. Iversen, "Amorphous Switches Add PROM Density", Electronics, 4/5/84, p. 54.
W. R. Iversen, "Amorphous Vias in Wafer Link Chips", Electronics, 9/22/83, p. 48-49.

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