Deep native oxide confined ridge waveguide semiconductor lasers

Details Deep native oxide confined ridge waveguide semiconductor lasers Deep native oxide confined ridge waveguide semiconductor lasers

1997-08-29

2000-03-28

Sanghavi, Hemang

Coherent light generators

Particular active media

Semiconductor

372 94, 385131, H01S 319

Patent

active

060440988

ABSTRACT:
A ridge waveguide semiconductor laser structure fabricated by etching and wet oxidation. The upper cladding layer is partially etched forming a ridge and a native oxide layer is wet oxidized from the remaining upper cladding layer and the active region outside the ridge. The deep native oxide layer provides strong optical confinement to the ridge waveguide. Alternately, the active region can be narrower than the ridge waveguide in the laser structure. The ridge waveguide semiconductor laser structures with native oxide layers can also be curved geometry lasers such as ring lasers.

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Kish et al., "Properties and Use of In0.5(AlxGa1-x)0.5P and AlxGa1-xAs Native Oxides in Heterostructure Lasers", Journal of Electronic Materials, vol. 21, No. 12, 1992, pp. 1133-1139. (no month).
Carraci et al., "High-performance planar native-oxide buried-mesa index-guided AlGaAs-GaAs quantum well heterostructure lasers", Appl. Phys. Lett., vol. 61 (3), Jul. 20, 1992, pp. 321-323.

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