Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2006-05-02
2006-05-02
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S510000, C257S516000, C257S522000, C438S424000, C438S439000, C438S672000
Reexamination Certificate
active
07038289
ABSTRACT:
Deep isolation trenches having sides and a bottom are formed in a semiconductor substrate. The sides and the bottom are coated with an electrically insulating material that delimits an empty cavity, and forms a plug to close the cavity. The sides of the trench are configured with a neck that determines the depth of the plug, and a first portion that tapers outwards from the neck as the distance from the bottom increases. Deep isolation trenches may be applied, in particular, to bipole and BiCMOS circuits.
REFERENCES:
patent: 6828646 (2004-12-01), Marty et al.
Arnal Vincent
Fortuin Arnoud
Marty Michel
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Jorgenson Lisa K.
Koninklijke Philips Electronics
Le Dung A.
STMicroelectronics SA
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