Deep-grid semiconductor device

Details Deep-grid semiconductor device Deep-grid semiconductor device

1983-12-29

1986-10-28

Carroll, James J.

357 13, 357 20, 357 56, 357 65, 357 68, 357 88, 357 91, H01L 2906, H01L 2348, H01L 2944, H01L 2952

Patent

active

046202137

ABSTRACT:
A semiconductor device has a deep control grid. A silicon substrate is grooved. The side walls and the bottom of the grooves are oxidized. Under the bottom of the grooves a dopant is implanted and diffused. A main metalization covering the grooved face makes a contact with the surface thereof and the parts of this metalization falling in the grooves does not cause any parasitic effect as the walls and the bottom of the grooves are insulated.

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patent: 4329772 (1982-05-01), Oikawa et al.
Ammar, E. S., & Rodgers, T. J., "UMOS Transistors on (110) Silicon", IEEE Trans. on Electron Devices, vol. ED-27, No. 5, May 1980, received May 1979, revised 9-1979.

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