Deep finger diodes

Details Deep finger diodes Deep finger diodes

1975-01-30

1976-08-31

Ozaki, G.

Metal treatment

Compositions

Heat treating

148171, 148172, 148177, 148179, 252 623E, 252 623GA, 357 20, H01L 734

Patent

active

039779106

ABSTRACT:
Deep finger diodes in a body of semiconductor material are fabricated by a thermal gradient zone melting process. A liquid wire or droplet is migrated into the body through one surface to a depth less than the thickness of the body. The migration of the liquid wire or droplet is reversed to remove the wire or droplet from the body leaving a recrystallized material of the body having solid solubility of a material therein.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann

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