Deep diode zeners

Metal treatment – Stock – Ferrous

Patent

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357 12, 357 60, 357 86, 357 89, 357 90, 148 15, H01L 2988, H01L 2990, H01L 2904, H01L 700

Patent

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039887570

ABSTRACT:
A deep diode zener has a lamellar structured body of single crystal semiconductor material. The lamellar structure is produced by a thermal gradient zone melting process embodying the thermomigration of metal "wires" through the body to form a region of conductivity opposite to that of the body. The material of the region is recrystallized semiconductor material of the body with solid solubility of the metal of the "wire" to impart the desired type conductivity and resistivity to the region.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 3544397 (1970-12-01), Weinerth

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