1976-08-09
1977-06-28
Wojciechowicz, Edward J.
357 35, 357 37, 357 60, 357 88, 357 89, 357 90, H01L 2972, H01L 2900, H01L 2904
Patent
active
040329550
ABSTRACT:
A deep diode transistor includes at least one of the emitter, the collector and the base regions comprising recrystallized material of the semiconductor substrate embodying the transistor. Each region of recrystallized material is formed in situ by the migration of a melt of a metal-rich semiconductor material through the material of the substrate at a predetermined elevated temperature along a thermal gradient established in the substrate.
REFERENCES:
patent: 2813048 (1957-11-01), Pfann
Anthony Thomas R.
Cline Harvey E.
Cohen Joseph T.
General Electric Company
Squillaro Jerome C.
Winegar Donald M.
Wojciechowicz Edward J.
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