Deep diode silicon controlled rectifier

Metal treatment – Stock – Ferrous

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357 38, 148 15, 357 89, 357 90, H01L 2974, H01L 2904, H01L 700

Patent

active

039887685

ABSTRACT:
A semiconductor controlled rectifier has a lamellar body of semiconductor material of at least one group of four alternate first and second regions of opposite type conductivity. The second regions are made from recrystallized semiconductor material of the first regions and contain a sufficient level of concentration of a dopant impurity to impart thereto the opposite type conductivity. It is recrystallized material with solid solubility of the impurity. The controlled rectifier is turned on and off by either a control electrode or a source of illumination.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 3727116 (1973-04-01), Thomas et al.
patent: 3737741 (1973-06-01), Bartelink et al.

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