Deep diode magnetoresistor

Electrical resistors – Resistance value responsive to a condition – Magnetic field or compass

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Details

357 27, H01L 4300

Patent

active

042245940

ABSTRACT:
A semiconductor magnetoresistor device embodies a plurality of spaced highly conductive planar metallic-like electrodes formed in situ by thermal gradient zone melting to maximize the increase in the current path in a magnetic field established in the device.

REFERENCES:
patent: 3567946 (1971-03-01), Paul
patent: 3897277 (1975-07-01), Blumenfeld
patent: 3975213 (1976-08-01), Anthony et al.
patent: 3988764 (1976-10-01), Cline et al.
patent: 4006040 (1977-02-01), Cline et al.
patent: 4017884 (1977-04-01), Eisele et al.
patent: 4082572 (1978-04-01), Anthony et al.

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