Deep diode lead throughs

Details Deep diode lead throughs Deep diode lead throughs

1975-01-30

1976-09-14

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29580, 29590, 148171, 357 60, 357 68, B01J 1700

Patent

active

039798208

ABSTRACT:
A body of semiconductor material has two major opposed surfaces. A region of recrystallized semiconductor material having solid solubility of a dopant material therein is disposed within, and extends entirely through the body and intersects the two major opposed surfaces. The recrystallized region of material is employed as an electrical means to interconnect electrical elements associated with the respective opposed major surfaces.

REFERENCES:
patent: 2813048 (1957-11-01), Pfaun
patent: 3419955 (1969-01-01), Schutze
patent: 3764409 (1973-10-01), Nomura

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