Deep diode devices and method and apparatus

Electric heating – Metal heating – By arc

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Details

219411, 29571, 29585, 148171, 357 60, 118 495, B23K 1500

Patent

active

040912574

ABSTRACT:
Deep diodes which extend in straight lines through a silicon wafer are produced by migrating aluminum droplets through the wafer while maintaining a finite temperature gradient through the wafer in the direction of straight line droplet travel, and at the same time maintaining a zero temperature gradient through the wafer in a direction normal to the droplet travel course. Unidirectional heat flow apparatus implementing this method is also disclosed.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 3308264 (1967-03-01), Ullery, Jr.
patent: 3472679 (1969-10-01), Ing, Jr. et al.
patent: 3473959 (1969-10-01), Ehinger et al.
patent: 3617375 (1971-11-01), Marek
patent: 3631836 (1972-01-01), Jarvela
patent: 3695217 (1972-10-01), Jacobsson
patent: 3717439 (1973-02-01), Sakai
patent: 3953876 (1976-04-01), Sirtl et al.
patent: 4030116 (1977-06-01), Blumenfeld

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