Metal treatment – Compositions – Heat treating
Patent
1975-02-24
1978-02-21
Wojciechowicz, Edward J.
Metal treatment
Compositions
Heat treating
357 60, H01L 2904, H01L 700
Patent
active
040750388
ABSTRACT:
Deep diodes which extend in straight lines through a silicon wafer are produced by migrating aluminum droplets through the wafer while maintaining a finite temperature gradient through the wafer in the direction of straight line droplet travel, and at the same time maintaining a zero temperature gradient through the wafer in a direction normal to the droplet travel course. Unidirectional heat flow apparatus implementing this method is also disclosed.
REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 3602781 (1971-08-01), Hart
patent: 3681220 (1972-08-01), Chizinsky
Anthony Thomas R.
Cline Harvey E.
Cohen Joseph T.
General Electric Company
Squillaro Jerome C.
Watts Charles T.
Wojciechowicz Edward J.
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