Deep diode bilateral semiconductor switch

Details Deep diode bilateral semiconductor switch Deep diode bilateral semiconductor switch

1975-02-26

1976-10-26

Wojciechowicz, Edward J.

Metal treatment

Stock

Ferrous

357 37, 357 38, 357 60, 148 15, 357 89, 357 90, H01L 2904, H01L 2974, H01L 29747, H01L 700

Patent

active

039887600

ABSTRACT:
A deep diode bilateral semiconductor switch has a lamellar body of single crystal semiconductor material of at least five alternate first and second regions of different and opposite type conductivity. The second regions are made from recrystallized semiconductor material of the first regions having solid solubility of metal therein to impart thereto the opposite type conductivity and selective resistivity. The bilateral semiconductor switch conducts current in either direction.

REFERENCES:
patent: 3711325 (1973-01-01), Hentzschel

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