Deep diffused thin photodiodes

Details Deep diffused thin photodiodes Deep diffused thin photodiodes

2005-10-25

2009-08-18

Purvis, Sue (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Bidirectional rectifier with control electrode

C257S184000, C257S233000, C257S292000, C257S448000, C257SE31115

Reexamination Certificate

active

07576369

ABSTRACT:
This invention comprises photodiodes, optionally organized in the form of an array, including p+ deep diffused regions or p+ and n+ deep diffused regions. More specifically, the invention permits one to fabricate thin 4 inch and 6 inch wafer using the physical support provided by a n+ deep diffused layer and/or p+ deep diffused layer. Consequently, the present invention delivers high device performances, such as low crosstalk, low radiation damage, high speed, low leakage dark current, and high speed, using a thin active layer.

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