Deep depletion insulated gate field effect transistors

Details Deep depletion insulated gate field effect transistors Deep depletion insulated gate field effect transistors

1974-04-19

1976-05-18

James, Andrew J.

357 4, 357 42, 357 49, H01L 2978, H01L 2712, H01L 2702

Patent

active

039582663

ABSTRACT:
A deep depletion insulated gate field effect transistor is made in a silicon layer on a sapphire substrate, so that its threshold voltage is relatively independent of the thickness of the silicon layer. The silicon layer has two parts, namely, a lower part adjacent to the sapphire substrate which is relatively lightly doped, and an upper part, preferably formed by ion implantation, having a doping concentration on the order of about 2 .times. 10.sup.15 atoms/cm.sup.3.

REFERENCES:
patent: 3653978 (1972-04-01), Robinson et al.
patent: 3789504 (1974-02-01), Jaddam

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