Deep collection guard ring

Fishing – trapping – and vermin destroying

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Details

437 58, 437 75, 437162, 148DIG82, H01L 218238

Patent

active

054380057

ABSTRACT:
A CMOS device is provided with a deep collector guard ring. The guard ring is formed by thermally deep diffusing impurities from a poly layer into the surface of a well beneath the poly layer. The guard ring can thus be easily manufactured using CMOS compatible fabrication processes to a depth which is greater than the source and drain regions of the CMOS device.

REFERENCES:
patent: 3986896 (1976-10-01), Ueno et al.
patent: 4762802 (1988-08-01), Parrillo
patent: 4920066 (1990-04-01), Hong et al.
Sze, "VLSI Technology", 1988, pp. 272, 311-314.

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