Deep buried layers for semiconductor devices

Details Deep buried layers for semiconductor devices Deep buried layers for semiconductor devices

1975-02-26

1976-11-02

Wojciechowicz, Edward J.

Metal treatment

Stock

Ferrous

357 23, 357 55, 357 68, 148 15, 357 89, 357 90, H01L 2978, H01L 2906, H01L 2904, H01L 2348

Patent

active

039900932

ABSTRACT:
A deep buried electrical layer is provided in a semiconductor device by thermal gradient zone melting.

REFERENCES:
patent: 3370184 (1968-02-01), Zuleeg
patent: 3681668 (1972-08-01), Kobayashi

Affiliated with

Also associated with

Rating

Deep buried layers for semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Deep buried layers for semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Deep buried layers for semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1163168