Decoupling capacitor for integrated circuit signal driver

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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257371, H01L 2976, H01L 2900

Patent

active

058834230

ABSTRACT:
A decoupling capacitor for an integrated circuit and method of forming the same. The decoupling capacitor includes a p-channel device having first and second p-type doped diffusion regions, a device channel region therebetween, a device gate overlying the device channel region, and a gate insulator separating the device gate and channel region. The first and second diffusion regions are electrically connected to a positive power supply, and the device gate is electrically connected to a negative power supply. The decoupling capacitor may be formed proximate a signal driver in the integrated circuit. The decoupling capacitor may be formed without additional, expensive semiconductor fabrication steps and operates to minimize noise in the circuit.

REFERENCES:
patent: 4849661 (1989-07-01), Bazes
patent: 5289025 (1994-02-01), Lee
patent: 5298797 (1994-03-01), Redl

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