Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-11-27
2007-11-27
Landau, Matthew C. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE29345, C361S306200, C361S734000
Reexamination Certificate
active
10993711
ABSTRACT:
A thin-dielectric unit capacitor is disclosed having a first node coupled to a first circuit connection point and a second node coupled to a second circuit connection point. It further contains a first and second thin-dielectric capacitors connected in series between the first and second nodes, wherein a thickness of a gate dielectric for each thin-dielectric capacitor is less than 50 angstroms.
REFERENCES:
patent: 4929989 (1990-05-01), Hayano
patent: 6051876 (2000-04-01), Gardner et al.
patent: 6347026 (2002-02-01), Sung et al.
patent: 2003/0193771 (2003-10-01), Liao
patent: 10256489 (1998-09-01), None
English translation of JP 10-256489.
Duane Morris LLP
Landau Matthew C.
Taiwan Semiconductor Manufacturing Co. Ltd.
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