Decoupled optic and electronic confinement laser diode

Details Decoupled optic and electronic confinement laser diode Decoupled optic and electronic confinement laser diode

1993-04-14

1994-07-19

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

053316550

ABSTRACT:
Laser diode with independent electronic and optical confinement, referred to as decoupled confinement, comprising an active region, i.e. an active layer, a single quantum well layer or a multi-quantum well layer, embedded in a carrier confinement structure providing for an energy barrier at least on one side of the active region. This energy barrier reduces carrier leakage out of the active region. The carrier confinement structure is embedded in an optical confinement structure which guides the optical light wave. The inventive laser diode is characterized in that the height of the energy barrier confining the carriers, and the refractive index step providing for optical waveguiding of the light wave are decoupled.

REFERENCES:
patent: 4328469 (1982-05-01), Scifres
patent: 4941146 (1990-07-01), Kobayashi
patent: 4989213 (1991-01-01), Haw et al.
patent: 5081634 (1992-01-01), Weisbuch et al.
"Room-Temperature Operation of an InGaAsP Double-Heterostructure Laser Emitting at 1.55 um on a Si Substrate" Applied Physics Letters 57(1990) Aug. 6, No. 6, pp. 593-595.
"The Growth of InGaAsP by CBE per SCH Quantum Well Lasers. Operating at 1.55 and 1.4 um", by M. E. Sherwin et al., Elsevier Science Publishers, Journal of Crystal Growth, 120, (1992), pp. 162-166.

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