Decoding scheme for reliable multi bit hot electron programming

Static information storage and retrieval – Floating gate – Particular connection

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36523006, 365205, 365184, 365182, G11C 1134, G11C 1604

Patent

active

054693845

ABSTRACT:
A nonvolatile memory circuit having a decoding scheme for reliable multiple bit hot electron programming. The nonvolatile memory circuit has a memory array in which data received at each data input can be programmed into multiple memory bits simultaneously. The address of each memory bit selected for programming is decoded by a row decoder and a column decoder. The row decoder decodes the word line of each selected memory bit and the column decoder decodes the bit line of each selected memory bit. The column decoder includes a programming column decoder and a read column decoder. The programming column decoder is enabled during a programming operation and disabled during a reading operation. The read column decoder is enabled during a reading operation and disabled during a programming operation. During a programming operation, a programming voltage is applied to the nonvolatile memory. The programming voltage generates a current which is distributed among multiple load lines and is eventually applied to each selected memory bit, thereby programming multiple memory bits simultaneously. During a reading operation, the programmed data in a memory bit selected for reading is read by a sense amplifier, which is coupled to the read column decoder. By providing a programming column decoder which is enabled during a programming operation and a read column decoder which is enabled during a reading operation, reliable multiple load lines are generated, thus ensuring the proper programming of the memory bits. Furthermore, the performance of the nonvolatile memory is increased.

REFERENCES:
patent: 5262984 (1993-11-01), Noguchi et al.
patent: 5293560 (1994-03-01), Harari
patent: 5398203 (1995-03-01), Prickett, Jr.
Adel S. Sedra et al., "Microelectronic Circuits", CBS College Publishing, 1982, pp. 776-780.

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