Decoding method for ROM matrix having a silicon controlled recti

Static information storage and retrieval – Read only systems – Semiconductive

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365174, G11C 1300

Patent

active

057814678

ABSTRACT:
A decoding method is used for a ROM matrix having silicon controlled rectifier memory units. In the memory units a voltage is applied to the emitter terminal and the base terminal of the first transistor of a silicon controlled rectifier unit so that the silicon controlled rectifier memory unit is operational. Current flows via the emitter terminal of the second transistor of the silicon controlled rectifier unit to the common electrode and can be detected. Decoding comprises selecting a memory unit for a read operation by applying a first voltage to the triggering word line electrode, that is electrically coupled to the selected memory unit, while applying a second voltage which is bigger than the first voltage to the remaining triggering word line electrodes. A first voltage is also applied to the bit line electrode that is electrically coupled to the selected memory unit while applying a third voltage smaller than both the first voltage and the second voltage or an earth connection to the remaining bit line electrodes.

REFERENCES:
patent: 4646271 (1987-02-01), Uchiyama et al.

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