DCPBH laser having a high temperature stability

Details DCPBH laser having a high temperature stability DCPBH laser having a high temperature stability

1988-08-29

1989-09-12

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

048667234

ABSTRACT:
A semiconductor laser of the double hetero-junction type has a current-limiting buried blocking layer with a second active layer and an additional passive layer provided above the first layer. As a result, the threshold current required for laser operation is less strongly dependent upon temperature. At the same time, the radiation intensity versus current strength characteristic of the laser above the threshold current is substantially straight, without the presence of "kinks".

REFERENCES:
patent: 4525841 (1985-06-01), Kitamura et al.
patent: 4597085 (1986-06-01), Mito et al.

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