Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Patent
1999-09-16
2000-11-14
Niebling, John F.
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
438240, 438608, 20419222, 20419218, 427 79, 427 81, 427100, 427375, H01L 2100, H01L 218242, H01L 2144
Patent
active
061469068
ABSTRACT:
In a method for manufacturing a capacitor including a lower electrode, a ferroelectric layer formed on the lower electrode, and an upper electrode formed on the ferroelectric layer, at least one of the lower and upper electrodes is made of laminated metal and conductive oxide. The laminated metal and conductive oxide are deposited by a DC magnetron reactive sputtering process using one metal target and mixture gas including oxygen wherein a ratio of oxygen in the mixture gas and a substrate temperature are definite and a DC input power is changed depending on the metal and the conductive oxide.
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M. Shimizu et al., "Pb(Zr,Ti)O.sub.3 Thin Film Deposition on Ir and IrO.sub.2 Electrodes by MOCVD", Journal of the Korean Physical Society, vol. 32, pp. S1349-S1352, Feb. 1998.
Hayashi Yoshihiro
Inoue Naoya
Ghyka Alexander G.
NEC Corporation
Niebling John F.
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