DC/DC converter with depletion mode compound semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257S329000, C257S330000

Reexamination Certificate

active

07038295

ABSTRACT:
In one embodiment, a dc/dc converter network (71) is described. The converter network (71) includes at least one GaAs depletion mode or normally on FET device (711, 712). The converter network (71) is a two-port system having a positive input terminal (710), a positive output terminal (730), and a negative input terminal (720) connected to a negative output terminal (740). A first GaAs depletion mode FET (711) is connected between the positive input terminal (710) and an internal node (795). A second GaAs depletion mode FET (712) is connected between the internal node (795) and the common negative terminals (720, 740). A control circuit (780) is connected gate leads of the two FETs (711, 712), to alternatively switch the devices from a current conducting mode to a current blocking mode. An inductor (760) is connected between the internal node (795) and the positive output terminal (730). The GaAs depletion mode devices provide a converter network with improved performance.

REFERENCES:
patent: 4262296 (1981-04-01), Shealy et al.
patent: 5231037 (1993-07-01), Yuan et al.
patent: 5610085 (1997-03-01), Yuan et al.
patent: 6356059 (2002-03-01), Yu
patent: 6628532 (2003-09-01), Rinne et al.
patent: 2001/0050393 (2001-12-01), Lotfi et al.
patent: 0874394 (1998-10-01), None

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