DC bias device for high power, low intermodulation RF-systems

Details DC bias device for high power, low intermodulation RF-systems DC bias device for high power, low intermodulation RF-systems

1996-06-03

1999-01-05

Gensler, Paul

Wave transmission lines and networks

Long line elements and components

333260, H01P 100, H01P 500

Patent

active

058567674

ABSTRACT:
A DC bias device for radio-frequency transmission systems of high power and low intermodulation connected between an originating station and a receiving station for an RF signal fed along a transmission line. Direct current is supplied from a source to the transmission line along a branch joined to the transmission line at a junction formed between the originating station and the receiving station. An open-circuit stub is formed along the transmission line between the transmitting station and the junction. A short-circuit stub is formed along the DC-supply branch between the source and the junction to the transmission line. The impedance (Zop) of the open-circuit stub, and the distance of the free heads of the near ends of the two stubs preferably is as low as possible.

REFERENCES:
patent: 3179816 (1965-04-01), Hall et al.
patent: 3197720 (1965-07-01), Dehn
patent: 4087767 (1978-05-01), Perkins
M. M. McDermott et al., Very Broadband Coaxial dc Returns Derived by Microwave Filter Synthesis, The Microwave Journal, pp. 33-36, Feb., 1965.

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