Data storage using modified voltages

Details Data storage using modified voltages Data storage using modified voltages

2011-08-09

2011-08-09

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Floating gate

Multiple values

C365S185090, C365S185170, C365S185180

Reexamination Certificate

active

07995388

ABSTRACT:
A method for data storage includes storing data in a target analog memory cell, which is one of a group of analog memory cells that are connected in series with one another, by writing an input storage value into the target memory cell. A first read operation, which reads a first output storage value from the target memory cell while biasing the other memory cells with respective first pass voltages, is applied to the target memory cell. A second read operation, which reads a second output storage value from the target memory cell while biasing the other memory cells with respective second pass voltages, is applied to the target memory cell. At least one of the second pass voltages is different from a respective first pass voltage. The data is reconstructed responsively to the first and second output storage values.

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