Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Reexamination Certificate
2005-03-29
2005-03-29
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
C257S079000, C257S350000, C313S310000, C313S311000, C313S336000, C369S101000, C369S126000
Reexamination Certificate
active
06872964
ABSTRACT:
The present disclosure relates to a data storage device, comprising a plurality of electron emitters adapted to emit electron beams, the electron emitters each having a planar emission surface, and a storage medium in proximity to the electron emitter, the storage medium having a plurality of storage areas that are capable of at least two distinct states that represent data, the state of the storage areas being changeable in response to bombardment by electron beams emitted by the electron emitters.
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Birecki Henryk
Kuo Huel-Pel
Lam Si-Ty
Naberhuis Steven L.
Flynn Nathan J.
Forde Remmon R.
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