Static information storage and retrieval – Floating gate – Multiple values
Patent
1997-04-18
1998-08-04
Nelms, David C.
Static information storage and retrieval
Floating gate
Multiple values
3651852, 36518909, 36518912, 36518905, 36518902, 365194, G11C 1606
Patent
active
057904545
ABSTRACT:
A data sensing apparatus and method of a multi-bit memory cell includes a first step of generating 2.sup.m -1 different reference voltages, a second step of applying a first intermediate reference voltage between at least two of the reference voltages to a control gate of the memory cell and outputting a binary bit as a highest bit depending upon detection of a drain current from the memory cell, and a third step of applying a second intermediate reference voltage between at least two of the reference voltages among the reference voltages lower than the first intermediate reference voltage applied to the control gate when the drain current is detected in the second step, and applying a third intermediate reference voltage between at least two of the reference voltages among the reference voltages higher than the first intermediate reference voltage applied to the control gate at the memory cell when the drain current is not detected, so as to output a lowest bit by repeatedly outputting data depending on whether the drain current is detected.
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LG Semicon Co. Ltd.
Nelms David C.
Tran Andrew Q.
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