Data retention of last word line of non-volatile memory arrays

Details Data retention of last word line of non-volatile memory arrays Data retention of last word line of non-volatile memory arrays

2011-07-19

2011-07-19

Hur, J. H. (Department: 2824)

Static information storage and retrieval

Floating gate

Disturbance control

C365S185220, C365S185180, C365S185290, C365S185280, C365S185170, C365S185240

Reexamination Certificate

active

07983078

ABSTRACT:
Techniques for operating non-volatile storage compensate. The techniques compensate for differences in floating gate coupling effect experienced by non-volatile storage elements on different word lines. An erase of a group of non-volatile storage elements is performed. A set of the non-volatile storage elements are for storing data and at least one of the non-volatile storage elements is a dummy that is not for storing data. The dummy is a neighbor to one of the data non-volatile storage elements. The data non-volatile storage elements are programmed at some point after the erase. Then, a programming voltage is applied to the dummy non-volatile storage element to increase the threshold voltage of the dummy to cause floating gate coupling effect to the neighbor non-volatile storage element to compensate for lesser floating gate coupling effect that the neighbor experienced during programming.

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