Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-12-27
1995-07-04
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 15, 257432, 257184, 365215, 372 43, 372 45, 372 50, H01L 2712, G11C 700, H01S 318, H01S 319
Patent
active
054303095
ABSTRACT:
A data processing system formed of a collective element of quantum boxes including an electrode and a plurality of quantum boxes which respectively have a barrier layer made of the first semiconductor on the electrode and a well layer made of a second semiconductor adjacent to the barrier layer. The first semiconductor has an electron affinity .PHI..sub.B and an energy gap E.sub.gB. The second semiconductor has an electron affinity .phi..sub.W and an energy gap E.sub.gW. The equations .phi..sub.W >.phi..sub.B and .phi..sub.W +E.sub.gW >.phi..sub.B +E.sub.gB are simultaneously satisfied.
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patent: 5079186 (1992-01-01), Narusawa
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Saadat Mahshid D.
Sony Corporation
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