Data output control circuit of a double data rate (DDR)...

Static information storage and retrieval – Addressing – Sync/clocking

Reexamination Certificate

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Details

C365S233110, C365S233120, C365S233130, C365S189050, C365S193000, C365S194000, C326S028000, C326S096000, C326S095000

Reexamination Certificate

active

07852707

ABSTRACT:
A semiconductor memory device using system clock with a high frequency can maintain a constant margin of operation even with a changed operating environment including voltage level, temperature, and process. The semiconductor memory device includes a data output control circuit configured to control data outputted in synchronization with a falling edge of a system clock using a first output source signal corresponding to a rising edge of the system clock, and to control data outputted in synchronization with the rising edge of the system clock using a second output source signal corresponding to a falling edge of the system clock, and a data output circuit configured to output data, the data output circuit being controlled by the data output control circuit.

REFERENCES:
patent: 7715253 (2010-05-01), Kim et al.
patent: 2003/0223279 (2003-12-01), Lee
patent: 2005/0174860 (2005-08-01), Kim et al.
patent: 1020050041613 (2005-05-01), None
patent: 1020060032428 (2006-04-01), None
patent: 1020060053431 (2006-05-01), None
patent: 1020060054610 (2006-05-01), None

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