Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-02-14
2006-02-14
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185080, C365S185280
Reexamination Certificate
active
06999350
ABSTRACT:
A semiconductor device having an electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of individual units of plural memory cells. The semiconductor device which functions as a microcomputer chip also has a processing unit and includes an input terminal for receiving an operation mode signal for switching the microcomputer between a first operation mode in which the flash memory is rewritten under control of a processing unit and a second operation mode in which the flash memory is rewritten under control of separate writing circuit externally connectable to the microcomputer.
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Baba Shiro
Ito Takashi
Kuroda Kenichi
Matsubara Kiyoshi
Mukai Hirofumi
Antonelli, Terry Stout and Kraus, LLP.
Hitachi ULSI Systems Co. Ltd.
Hoang Huan
Renesas Technology Corp.
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