Static information storage and retrieval – Associative memories – Ferroelectric cell
Patent
1992-05-01
1994-04-05
LaRoche, Eugene R.
Static information storage and retrieval
Associative memories
Ferroelectric cell
G11C 1500
Patent
active
053011414
ABSTRACT:
A memory stores data in a first-in-first-out order and associatively matches an incoming datum with the stored data. The stored data includes a first datum and a second datum stored following the first datum. The memory includes a data storage cell which comprises a memory cell coupled to a bit line and a word line. The memory cell stores the first datum. The memory cell can be accessed through the bit line and the word line for read and write operation. The memory cell includes a first half and a second half connected to each other. An exclusive NOR gate circuit is coupled to an output of the memory cell and the bit line for associatively comparing the first datum stored in the memory cell with an incoming datum along the bit line. The exclusive NOR gate circuit outputs a match signal when the incoming datum matches the first datum. A transistor circuit is coupled to the memory cell for disconnecting the first half from the second half under the control of a control signal coupled to the transistor circuit such that the first half retains the first datum and the second half is freed to receive the second datum through a pass transistor. When the transistor circuit connects the first half and the second half into the memory cell under the control of the control signal, the memory cell then stores the second datum. The data storage cell preserves the first-in-first-out order of the memory when the first datum is taken out of the data storage cell. The associative memory formed by a plurality of the data storage cells is also described.
REFERENCES:
patent: 4723224 (1988-02-01), Van Hulett et al.
patent: 4725981 (1988-02-01), Rutledge
patent: 4873665 (1989-10-01), Jiang et al.
Intel Corporation
LaRoche Eugene R.
Niranjan Frank
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