1979-02-09
1982-01-19
Munson, Gene M.
357 52, 357 53, H01L 2702, H01L 2934, H01L 2940
Patent
active
043120113
ABSTRACT:
This invention relates to a Darlington power transistor which executes a stable operation and which demonstrates satisfactory characteristics, characterized in that respective base regions of a driving transistor and an output transistor to be Darlington-connected, and a semiconductor resistance region having the same conductivity type as that of both the base regions and serving to connect both said base regions are formed in a surface of a first conductivity type semiconductor substrate serving as a common collector region; and that a semiconductor region having the same conductivity type as that of said semiconductor substrate and an impurity concentration higher than that of said semiconductor substrate is formed in the semiconductor substrate surface between at least one of said base regions and said semiconductor resistance region and at a position apart from said at least one base region and said semiconductor resistance region.
REFERENCES:
patent: 3573571 (1971-04-01), Brown
patent: 3596150 (1971-07-01), Berthold et al.
patent: 3600648 (1971-08-01), Longo
Hitachi , Ltd.
Munson Gene M.
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