Darlington circuit having an improved diode drain

Details Darlington circuit having an improved diode drain Darlington circuit having an improved diode drain

1979-03-28

1981-09-08

Wojciechowicz, Edward J.

357 49, 357 55, 357 56, 357 86, H01L 2702

Patent

active

042888077

ABSTRACT:
In a Darlington circuit with integrated speed-up diode the parasitic four-layer effect (p-n-p-n), which is detrimental to the circuit, is removed by giving the diode a divided configuration. The width of the sub-regions is chosen to be so small that the short-circuited p-n junction between the cathode of the diode and the base of the control transistor cannot or substantially can not be biased in the forward direction in the inner part of the semiconductor device.

REFERENCES:
patent: 4138690 (1979-02-01), Nawa et al.
IBM-Tech. Bul.-vol. 16, No. 6, Nov. 1973-pp. 1735-1736 Jones et al.

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