Darlington circuit comprising a field effect transistor and a bi

Details Darlington circuit comprising a field effect transistor and a bi Darlington circuit comprising a field effect transistor and a bi

1988-08-05

1989-03-07

James, Andrew J.

357 234, 357 43, H01L 2702

Patent

active

048110744

ABSTRACT:
A Darlington circuit comprises a field effect transistor and a bipolar transistor monolithically integrated on a semiconductor body of a first conductivity type. In order to reduce the residual voltage which drops off between the emitter and the collector of the output transistor in the current-conducting condition, the emitter of the output transistor is composed of a plurality of emitter regions of the first conductivity type which are located in a plurality of island-shaped semiconductor regions of the second conductivity type, which thus serves as base regions for the output transistor. The lateral spacing between an emitter region and a source region of the field effect transistor provided in one and the same island-shaped semiconductor region is selected smaller than the thickness of the semiconductor body between its principle surfaces which are provided with contacts for the emitter terminal and the collector terminal.

REFERENCES:
patent: 4164747 (1979-08-01), Gerstner
patent: 4543596 (1985-09-01), Strack et al.
patent: 4584593 (1986-04-01), Tihanyi
patent: 4604535 (1986-08-01), Sasayama et al.
Leturcq, "Power Bipolar Devices", Microelectron. Reliab., vol. 24, No. 2, 1984, pp. 313-337.

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