Dark field, photon tunneling imaging probes

Details Dark field, photon tunneling imaging probes Dark field, photon tunneling imaging probes

1996-06-28

1998-03-03

Evans, F. L.

Optics: measuring and testing

By polarized light examination

With light attenuation

356376, 25055922, G01B 1124, G01B 1130

Patent

active

057241392

ABSTRACT:
Dark-field imaging probes that employs photon tunneling to visualize and measure submicron features of scattering surfaces at full-field and in real-time or substantially real-time. Each probe is particularly useful for characterizing tiny surface features of reflecting or transmissive materials within the subnanometer to several micron range and is readily adaptable for portable use where it can be employed for characterizing large surfaces such as aircraft wings, fabrics, or papers, or the like. The probes comprise an lighting section for illuminating a surface with an evanescent field and a collecting section positioned with respect to the illuminated surface to channel radiant energy converted from the evanescent field by the process of scattering to unbound energy propagating away from the surface. The intensity of the propagating energy, which varies in accordance with the scattering properties of the surface and the local proximity of surface details to the evanescent field, is imaged preferably at low magnification and wide angle by a following imager which may be a vidicon, digital camera, or other photo detector device. Signals from the imager may be sent to distant system components for subsequent signal processing, display, and metrology purposes.

REFERENCES:
patent: 4681451 (1987-07-01), Guerra et al.
patent: 5088321 (1992-02-01), Kajikawa et al.

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