Dark field imaging defect inspection system for repetitive patte

Details Dark field imaging defect inspection system for repetitive patte Dark field imaging defect inspection system for repetitive patte

1991-05-17

1993-01-05

Rosenberger, Richard A.

Optics: measuring and testing

Inspection of flaws or impurities

Having predetermined light transmission regions

356338, G01N 1502

Patent

active

051775590

ABSTRACT:
An optical inspection system for patterned semiconductor wafers generates a dark field image of the wafer by applying a collimated beam of monochrome light at an incident angle with respect to the surface of the wafer of between 8.degree. and a maximum angle defined by the numerical aperture of the imaging system and collecting the light which is scattered at angles approximately normal to the surface of the wafer and within the numerical aperture of the imaging system. In addition, the incident light is at an angle of 45.degree. in the surface plane of the wafer with respect to the rectangular lines which predominate in the pattern. Before forming the dark field image, the collected light is passed through a Fourier transform filter which substantially attenuates spatial frequency components corresponding to the pattern. In the resultant dark field image, defects in the pattern and contaminating particles are accentuated relative to the pattern features.

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