Dark current reduction circuitry for CMOS active pixel sensors

Details Dark current reduction circuitry for CMOS active pixel sensors Dark current reduction circuitry for CMOS active pixel sensors

2007-03-06

2007-03-06

Luu, Thanh X. (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C348S308000

Reexamination Certificate

active

11327359

ABSTRACT:
A row driver circuit is disclosed for supplying a reset voltage to a plurality of reset transistors of an active pixel sensor array while minimizing gate induced drain leakage (GIDL). The row driver circuit is configured to supply a high voltage level (e.g., Vdd or higher) to the reset transistors of the array during a reset operation. The row driver circuit is further configured to supply a low voltage level (e.g., a voltage level higher than ground) to the reset transistors of the array when the pixels are not being reset (e.g., during integration). The reduced potential difference realized between the respective gates of the reset transistors and the respective photodiodes of the pixels, when the pixels are not being reset, results in reduced GIDL.

REFERENCES:
patent: 5578813 (1996-11-01), Allen
patent: 5952686 (1999-09-01), Chou
patent: 6016281 (2000-01-01), Brox
patent: 6054704 (2000-04-01), Pritchard
patent: 6809768 (2004-10-01), Merrill

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