Dark current reducing guard ring

Details Dark current reducing guard ring Dark current reducing guard ring

1997-09-30

1999-01-12

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257446, 257452, 257459, 257461, H01L 27148

Patent

active

058594507

ABSTRACT:
A photodiode is provided. The photodiode includes an insulative region (IR) that permits passage of light therethrough. The photodiode also includes a substrate region of a first conductivity type and a well region of a second conductivity type. The well is formed within the substrate, beneath the IR. The well is demarcated from the substrate by a first surface. The photodiode further includes a heavily doped region (HDR) of the second conductivity type. The HDR is formed within the IR at a first position. The first surface meets the HDR at substantially the first position.

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patent: 4722910 (1988-02-01), Yasaitis
patent: 5221856 (1993-06-01), Decker et al.

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