Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-04-28
1996-10-08
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 22, 257 17, 257189, 257441, H01L 310304, H01L 31101
Patent
active
055634230
ABSTRACT:
An improved multiquantum well superlattice photodetector (10) for detecting long wavelength infrared radiation. Electron transport in a first excited energy state is enhanced in barrier layers (20) of the superlattice (16) by lowering the potential energy barriers of the barrier layers (20) to a predetermined level below the first excited energy state. The tunneling component of the dark current in a multiquantum well photodetector (10) may be substantially eliminated by placing a blocking layer (22) at one end of the superlattice (16). The thickness of the blocking layer (22) is also substantially greater than that of the barrier layers (20) of the superlattice (16) to prevent charge carriers which tunnel through the superlattice (16) from reaching the collector contact. The blocking layer (22) also has a potential energy barrier having a height at a level higher than that of the barrier layers (20) of the superlattice (16).
REFERENCES:
patent: 5031013 (1991-07-01), Choi
Gourley et al Appl. Phys Lett 49 (2), 14 Jul. 86 "Diffusion Dynamics . . . Superlattices".
Levine, B. F. et al., "High-detectivity D*--1.0.times.10.sup.10 cm .sqroot.Hz/W GaAs/AlGaAs multiquantum well .lambda.=8.3 .mu.m infrared detector", Appl. Phys. Lett. 53(4), 25 Jul. 1988, pp. 296-298.
Sato Robert N.
Wen Cheng P.
Wu Chan-Shin
Denson-Low W. K.
Hughes Aircraft Company
Jackson, Jr. Jerome
Schubert W. C.
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