Damascene trench capacitor for mixed-signal/RF IC applications

Details Damascene trench capacitor for mixed-signal/RF IC applications Damascene trench capacitor for mixed-signal/RF IC applications

2005-01-04

2005-01-04

Ho, Hoai (Department: 2818)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S387000, C438S396000

Reexamination Certificate

active

06838352

ABSTRACT:
A method for fabricating a capacitor on a semiconductor substrate is disclosed. The method may include simultaneously forming at least one via and at least one upper capacitor plate opening in a first dielectric layer having an underlying cap dielectric layer deposited over a first material region having a first conductive material within a conductive region and forming a trench above the via. The method may also include filling the via, trench, and upper capacitor plate opening with a second conductive material resulting in an integrated circuit structure and employing CMP to remove any excess second conductive material from the integrated circuit structure.

REFERENCES:
patent: 20020155676 (2002-10-01), Stetter et al.

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