Damascene structure having a reduced permittivity and...

Details Damascene structure having a reduced permittivity and... Damascene structure having a reduced permittivity and...

2006-12-27

2009-10-13

Lee, Hsien-ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C438S422000, C438S627000, C257SE21573

Reexamination Certificate

active

07602038

ABSTRACT:
A semiconductor device includes a damascene structure and an air gap embedded in the damascene dielectric layer. A method of manufacturing a semiconductor device includes depositing a metal barrier in advance as an etch stop, forming a copper damascene interconnect structure, forming an air gap, and depositing a photosensitive passivation material on the air gap.

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