Semiconductor device manufacturing: process – Semiconductor substrate dicing
Reexamination Certificate
2007-08-14
2007-08-14
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
C438S113000, C438S933000, C257SE21017, C257SE21127, C257SE21229, C257SE21237, C257SE21304
Reexamination Certificate
active
11121690
ABSTRACT:
In fabricating a microelectromechanical structure (MEMS), a method of forming a narrow gap in the MEMS includes a) depositing a layer of sacrificial material on the surface of a supporting substrate, b) photoresist masking and at least partially etching the sacrificial material to form at least one blade of sacrificial material, c) depositing a structural layer over the sacrificial layer, and d) removing the sacrificial layer including the blade of the sacrificial material with a narrow gap remaining in the structural layer where the blade of sacrificial material was removed.
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Howe Roger T.
King Tsu-Jae
Quevy Emmanuel P.
Takeuchi Hideki
Nhu David
O'Banion John P.
The Regents of the University of California
Woodward Henry K.
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