Damascene phase change memory

Details Damascene phase change memory Damascene phase change memory

2007-05-01

2007-05-01

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257SE45002, C438S257000, C438S593000

Reexamination Certificate

active

10634139

ABSTRACT:
A phase change material may include a pore formed of a relatively smaller phase change material and a relatively larger resistance heater. As a result, the relatively smaller portion of phase change material may have improved properties.

REFERENCES:
patent: 5970336 (1999-10-01), Wolstenholme et al.
patent: 6777705 (2004-08-01), Reinberg et al.
patent: 6791102 (2004-09-01), Johnson et al.
patent: 6791107 (2004-09-01), Gill et al.
patent: 6818481 (2004-11-01), Moore et al.
patent: 6921912 (2005-07-01), Campbell
patent: 2004/0115372 (2004-06-01), Lowrey
Hwang, Y.N., Hong, J.S., Lee, S.H. Ahn, S.J., Jeong, G.T., Koh, G.H., Kim, H.J., Jeong, W.C., Lee, S.Y., Park, J.H., Ryoo, K.C.., Horii, H., Ha, Y.H., Yi, J.H., Cho, W.Y., Kim, Y.T., Lee, K.H., Joo, S.H., Park, S.O., Jeong, U.I., Jeong, H.S. and Kim, Kinam, “Completely CMOS-Compatible Phase-Change Nonvolatile RAM Using NMOS Cell Transistors,” presented at 2003 19thIEEE Non-Volatile Semiconductor Memory Workshop, Monterey, California, Feb. 26-20, 2003.
Ha, Y.H., Yi, J.H., Horii, H., Park, J.H., Joo, S.H., Park, S.O., Chung, U-In and Moon, J.T., “An Edge Contact Type Cell for Phase Change RAM Featuring Very Low Power Consumption,” presented at IEEE 2003 Symposium on VLSI Technology, Kyoto, Japan, Jun. 12-14, 2003.
Hwang, Y.N., Hong, J.S., Lee, S.H. Ahn, S.J., Jeong, G.T., Koh, G.H., Oh, J.H., Kim, H.J., Jeong, W.C., Lee, S.Y., Park, J.H., Ryoo, K.C., Horii, H., Ha, Y.H., Yi, J.H., Cho, W.Y., Kim, Y.T., Lee, K.H., Joo, S.H., Park, S.O., Chung, U.I., Jeong, H.S. and Kim, Kinam, “Full Integration and Reliability Evaluation of Phase-change RAM Based on 0.24 mm-CMOS Technologies,” presented at IEEE 2003 Symposium on VLSI Technology, Kyoto, Japan, Jun. 12-14, 2003.
Horii, H., Yi, J.H., Park, J.H., Ha, Y.H., Baek, I.G., Park, S.O., Hwang, Y.N., Lee, S.H., Kim, Y.T., Lee, K.H., Chung, U-In and Moon, J.T., “A Novel Cell Technology Using N-doped GeSbTe Films for Phase Change RAM,” presented at IEEE 2003 Symposium on VLSI Technology, Kyoto, Japan, Jun. 12-14, 2003.

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