Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2006-05-09
2006-05-09
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S781000, C257S773000, C257S786000
Reexamination Certificate
active
07042100
ABSTRACT:
A semiconductor device includes an insulating film. On this insulating film are formed an interconnection trench communicating with a semiconductor element and a pad trench communicating with the interconnection trench. In the pad trench, a protrusion is formed by leaving one part of the insulating film. A conductive film is formed over the insulating film including the interconnection and pad trenches. Thereafter, the conductive film is removed by a CMP process. At this time, the protrusion serves to prevent the conductive film in the pad trench from being over-polished.
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Kumamoto Nobuhisa
Matsumoto Muneyuki
Yamamoto Koji
Bodner Gerald T.
Lee Eugene
Rohm Co. Ltd
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